Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering
Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering
复制标题
DOI：
10.1063/1.2213347
复制
发表时间：
2006-06-12
影响因子：
4
通讯作者：
Streiffer, S. K.
中科院分区：
文献类型：
--
作者：
Das, R. R.;Kim, D. M.;Streiffer, S. K.
我们用溅射法在（001）、（101）和（111）SrTiO_3衬底上生长了表面光滑的BiFe_3外延薄膜。四圆X射线衍射和横截面透射电子显微镜表明，BiFeO 3薄膜具有菱面体对称性，虽然小的单斜畸变尚未被排除。在高错切（4度）（001）SrTiO 3上的BiFeO 3中观察到垂直于衬底错切方向取向且无杂质相的条状铁电畴，这归因于相对高的反射极化值（类似于71 μ C/cm（2））。在低错切（0.8度）SrTiO 3上生长的膜具有少量的不纯相α-Fe 2 O 3，其有助于降低极化值（类似于63 μ C/cm（2））。在（101）和（111）SrTiO_3上生长的BiFeO_3薄膜的反射极化分别为86和98 μ C/cm（2）。(c)2006年，美国物理学会。
We have grown epitaxial BiFeO3 thin films with smooth surfaces on (001), (101), and (111) SrTiO3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO3 on high miscut (4 degrees) (001) SrTiO3, which attributes to a relatively high value of remanent polarization (similar to 71 mu C/cm(2)). Films grown on low miscut (0.8 degrees) SrTiO3 have a small amount of impure phase alpha-Fe2O3 which contributes to lower the polarization values (similar to 63 mu C/cm(2)). The BiFeO3 films grown on (101) and (111) SrTiO3 exhibited remanent polarizations of 86 and 98 mu C/cm(2), respectively. (c) 2006 American Institute of Physics.