Electronic and optical properties of InGaAs quantum wells with Mn-delta-doping GaAs barriers
Electronic and optical properties of InGaAs quantum wells with Mn-delta-doping GaAs barriers
复制标题
具有 Mn-δ 掺杂 GaAs 势垒的 InGaAs 量子阱的电子和光学特性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. Brum
中科院分区：
文献类型：
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作者：
U. C. Mendes;M. Balanta;M. Brasil;J. Brum
本文报道了势垒掺杂锰的InGaAs量子威尔斯阱的电子结构和光学性质。我们计算的电子态和光发射的包络函数和有效质量近似下，使用自旋密度泛函理论在存在一个外部磁场。在低磁场（B < 5 T）下，我们观察到朗道能级的磁振荡，这种磁振荡主要由空穴自旋和Mn自旋之间的磁相互作用引起，而在高磁场下，空穴气的自旋极化是主要的效应.我们的研究结果还表明，门电压显着改变发射能量的磁振荡，并可能是一个外部控制参数的系统的磁性。最后讨论了朗道能级振荡对发射光谱的影响，并与已有的实验结果进行了比较。
We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass approximations using the spin-density functional theory in the presence of an external magnetic field. We observe magneto-oscillations of the Landau levels at low-magnetic fields (B < 5 T) that are dominated by the magnetic interaction between holes spin and Mn spin, while at high magnetic fields the spin-polarization of the hole gas is the dominant effect. Our results also show that a gate voltage alter significantly the magneto-oscillations of the emission energy and may be an external control parameter for the magnetic properties of the system. Finally, we discuss the influence of the Landau Levels oscillations in the emission spectra and compare with available experimental.