Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
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两步沉积法控制多晶硅结构
DOI：
10.1143/jjap.39.3888
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发表时间：
2000
影响因子：
1.5
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
A. Heya;A. Izumi;A. Masuda;H. Matsumura
多晶硅 (poly-Si) 薄膜是在低于 400°C 的温度下通过催化化学气相沉积 (Cat-CVD)（通常称为“热线 CVD”方法）采用两步沉积 (TSD) 获得的。在TSD中，沉积过程中基底温度发生变化，从初始步骤的200秒的短时间到第二步骤的820秒。利用拉曼光谱、原子力显微镜、反射高能电子衍射和透射电镜观察，对TSD法制备的Cat-CVD多晶硅薄膜与常规方法制备的薄膜的结构性能进行了对比研究。结果发现，非晶硅孕育层的表面形貌、晶粒结构和厚度均相关，并且通过TSD方法改变了结构。
Polycrystalline silicon (poly-Si) films are obtained at temperatures below 400°C by the catalytic chemical vapor deposition (Cat-CVD), often called “hot-wire CVD” method, using two-step deposition (TSD). In TSD, the substrate temperature is changed during deposition from the initial step for a short time of 200 s to the second step of 820 s. A comparative study on the structural properties of Cat-CVD poly-Si films prepared by the TSD method and those of the films prepared by conventional method was carried out using Raman spectroscopy, atomic force microscopy, reflection high-energy electron diffraction and transmission electron microscopy observation. It is found that the surface morphology, grain structure and thickness of the amorphous Si incubation layer are all correlated, and the structures are changed by TSD method.