YBa $_2$ Cu $_3$ O $_{7-\delta }$ -CeO $_2$ -YBa $_2$ Cu $_3$ O $_{7-\delta }$ Multilayers Grown by Reactive Co-Evaporation on Sapphire Wafers
YBa $_2$ Cu $_3$ O $_{7-\delta }$ -CeO $_2$ -YBa $_2$ Cu $_3$ O $_{7-\delta }$ Multilayers Grown by Reactive Co-Evaporation on Sapphire Wafers
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YBa $_2$ Cu $_3$ O $_{7-delta }$ -CeO $_2$ -YBa $_2$ Cu $_3$ O $_{7-delta }$ 通过反应共蒸发生长的多层膜
DOI：
10.1109/tasc.2019.2898778
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发表时间：
2019
影响因子：
1.8
通讯作者：
Cybart, Shane A.
中科院分区：
文献类型：
--
作者：
Wang, Yan-Ting;Semerad, Robert;McCoy, Stephen J.;Cai, Han;LeFebvre, Jay;Grezdo, Holly;Cho, Ethan Y.;Li, Hao;Cybart, Shane A.
采用反应共蒸发法制备了双层电子学应用的高温超导薄膜异质结构。外延结构由35-nm YBa 2Cu 3 O 7-δ（YBCO）、75-nm CeO 2、150-nm YBCO和20-nm CeO 2在r面蓝宝石晶片上组成。底部和顶部YBCO层的临界温度分别为83.6 K和84.8 K。原子力显微镜揭示了光滑的表面，顶部YBCO层的RMS粗糙度为4.7 nm。CeO 2绝缘层表现出在低温下冻结的跳跃传导，使这些结构适合于具有隔离接地层的电路。
High-TCsuperconductor thin film heterostructures were deposited using reactive co-evaporation for dual layer electronic applications. The epitaxial structure consisted of 35-nm YBa2Cu3O7-δ(YBCO), 75-nm CeO2, 150-nm YBCO, and 20-nm CeO2on r-plane sapphire wafers. The critical temperature was measured to be 83.6 K and 84.8 K for the bottom and top YBCO layers, respectively. Atomic force microscopy reveals smooth surfaces with RMS roughness of the top YBCO layer to be 4.7 nm. The CeO2insulating layer exhibited hopping conduction that freezes out at low temperature, making these structures suitable for electrical circuits with isolated ground planes.