Structural characterization of the temperature dependence of C60‐thin films on mica (001) by x‐ray diffraction
Structural characterization of the temperature dependence of C60‐thin films on mica (001) by x‐ray diffraction
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通过 X 射线衍射表征云母 (001) 上 C60 薄膜的温度依赖性
DOI：
10.1063/1.357456
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
B. Stritzker
中科院分区：
文献类型：
--
作者：
S. Henke;K. Thürer;J. Lindner;B. Rauschenbach;B. Stritzker
在室温至 200°C 之间的基板温度下，以恒定的沉积速率，通过热蒸发在云母 (001) 基板上沉积了 C60 薄膜。通过 X 射线衍射系统地研究了衬底温度对 C60 薄膜生长的影响。 (111) 峰的 θ–2θ 测量显示，随着基底温度的升高，半峰全宽 (FWHM) 减小，导致基底温度为 200°C 时，最小 FWHM 为 0.15°。平面外马赛克分布为 Δω=0.2° 的取向薄膜可以在 150±25°C 的基板温度下生长。可以看出，面内外延排列 C60(111)||云母(001) 由晶种条件决定，与衬底温度无关。衬底温度的升高增强了以平行于表面的 {111} 面取向的 C60 晶体的外延排列，以及围绕基底旋转 60° 的孪晶的方位角排列。
Thin C60 films have been deposited on mica(001) substrates by thermal evaporation at substrate temperatures between room temperature and 200 °C and at a constant deposition rate. The influence of the substrate temperature on the growth of C60‐thin films has been systematically investigated by x‐ray diffraction. θ–2θ measurements of the (111) peaks show a decrease of the full width at half‐maximum (FWHM) with increasing substrate temperature, leading to a minimum FWHM of 0.15° for a substrate temperature of 200 °C. Oriented films with an out‐of‐plane mosaic spread of Δω=0.2° could be grown at a substrate temperature of 150±25 °C. It can be shown that the in‐plane epitaxial arrangement C60(111)∥mica(001) is determined by the seeding conditions and is independent of the substrate temperature. An increasing substrate temperature enhances the epitaxial alignment of the C60 crystals oriented with a {111} face parallel to surface and also the azimuthal alignment of the twins which are rotated by 60° about the su...