High resolution CdZnTe pixel detectors with VLSI readout
High resolution CdZnTe pixel detectors with VLSI readout
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具有 VLSI 读出功能的高分辨率 CdZnTe 像素探测器
DOI：
10.1109/nssmic.1999.842540
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. M. Schindler
中科院分区：
文献类型：
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作者：
W. R. Cook;S. Boggs;A. Bolotnikov;J. Burnham;M. Fitzsimmons;F. Harrison;B. Kecman;B. Matthews;S. M. Schindler
带有定制VLSI读出的CdZnTe像素探测器正在加州理工学院/喷气推进实验室开发，用于聚焦硬X射线望远镜。我们最近测试了几个原型探测器组件，每个组件由2 mm厚的CdZnTe像素探测器铟凸块键合到我们的超大规模集成电路读出芯片。一个完整的脉冲高度分析链位于每个680 × 650 /spl mu/m像素的正下方，包括一个前置放大器、整形放大器和一个峰值展宽器/前置放大器。在这里，我们报告的第一个全功能的操作，这些检测器/超大规模集成电路的混合。使用Am/sup 241/源，准直以照射单个像素，在-10 ℃下测量59.5 keV线的670 eV FWHM的优异能量分辨率，电子噪声仅为340 eV FWHM。执行具有未准直源的照明以评估像素响应的均匀性并且锻炼读出芯片处理由在像素边界上方相互作用的X射线引起的多个像素事件的能力。使用钨狭缝掩模证明了探测器的成像能力。
CdZnTe pixel detectors with a custom VLSI readout, are being developed at Caltech/JPL for use in focusing hard X-ray telescopes. We have recently tested several prototype detector assemblies, each consisting of a 2 mm thick CdZnTe pixel detector indium bump bonded to our VLSI readout chip. A complete pulse height analysis chain is located directly below each 680 by 650 /spl mu/m pixel and includes a preamplifier, shaping amplifiers, and a peak stretcher/discriminator. Here we report on the first fully functional operation of these detector/VLSI hybrids. Using an Am/sup 241/ source, collimated to illuminate a single pixel, excellent energy resolution of 670 eV FWHM was measured for the 59.5 keV-line at -10 C, with electronic noise of only 340 eV FWHM. Illumination with an uncollimated source was performed to assess the uniformity of pixel response and to exercise the readout chip's ability to process multiple pixel events arising from X-rays interacting above pixel boundaries. The imaging capability of the detector was demonstrated using a tungsten slit mask.