Diffusion and Permeation of He, Ne, Ar, Kr, and D2 through Silicon Oxide Thin Films
Diffusion and Permeation of He, Ne, Ar, Kr, and D2 through Silicon Oxide Thin Films
复制标题
He、Ne、Ar、Kr 和 D2 通过氧化硅薄膜的扩散和渗透
DOI：
10.1063/1.1675072
复制
发表时间：
1971
影响因子：
4.4
通讯作者：
D. R. Begeal
中科院分区：
文献类型：
--
作者：
W. Perkins;D. R. Begeal
A technique for the preparation of pinhole‐free glass films on porous substrates is described. The permeabilities of He, Ne, Ar, Kr, and D2 and the diffusivities of Ne, Ar, and D2 in the films are reported. The temperature range studied for He, Ne, and D2 was 25–500°C, while the range for Ar and Kr was 650–920°C. Activation energies reported for the permeabilities are: He, 5.22 kcal/mole; Ne, 9.13 kcal/mole; Ar, 25.2 kcal/mole; Kr, 44 kcal/mole; and D2, 8.32 kcal/mole. Activation energies reported for diffusivities are: Ne, 9.55 kcal/mole; Ar, 28.7 kcal/mole; and D2, 9.26 kcal/mole. A technique of nonlinear least squares curve fitting for the calculation of diffusion coefficients is described, and various interpretations of the temperature dependence of the diffusivity preexponential factor are discussed.
