Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations
Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations
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实际开关操作下混合漏极嵌入式栅极注入晶体管 (HD-GIT) 的寿命评估
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
T. Ueda
中科院分区：
文献类型：
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作者：
A. Ikoshi;Masahiro Toki;Hiroto Yamagiwa;Daijiro Arisawa;M. Hikita;Kazuki Suzuki;M. Yanagihara;Y. Uemoto;Kenichiro Tanaka;T. Ueda
研究了GaN基混合漏极嵌入栅极注入晶体管（HD-GIT）在连续开关操作下的可靠性，以提取实际开关应用下的寿命。通过改变环境温度、开关电压和开关电流，推导出开关寿命，得到相应的加速因子。基于所获得的因素，我们确定开关安全工作区（SSOA），最近提出定义的Ids-Vds区域内，设备可以安全切换。据我们所知，这是GaN功率晶体管SSOA的首次演示。我们估计的开关寿命时，HD-GIT采用在3千瓦的图腾柱功率因数校正（PFC）电路在一个典型的使用条件。估计寿命为24年，我们认为这是足够长的。
Reliability of a GaN-based Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under continuous switching operation is investigated to extract the lifetime under a practical switching application. Switching lifetimes are deduced by varying ambient temperature, switching voltage and switching current to obtain their corresponding acceleration factors. Based on the obtained factors, we determine Switching Safe Operating Area (SSOA) that is proposed recently to define the Ids-Vds area inside which the device can be switched safely. To our knowledge, this is the first demonstration of SSOA for a GaN power transistor. We estimate the switching lifetime when the HD-GITs are employed in 3 kW totem-pole power factor correction (PFC) circuit under a typical usage condition. The estimated lifetime is 24 years, which we believe is sufficiently long.