Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy
Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy
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DOI：
10.1063/1.117558
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发表时间：
1996-12
影响因子：
4
通讯作者：
S. Xin;P. Wang;A. Yin;C. Kim;M. Dobrowolska;J. Merz;J. Furdyna
中科院分区：
文献类型：
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作者：
S. Xin;P. Wang;A. Yin;C. Kim;M. Dobrowolska;J. Merz;J. Furdyna
我们报道了在ZnSe和ZnMnSe上分子束外延生长过程中自组装CdSe量子点的形成。原子力显微镜对未封盖点的样品进行测量，显示出相对狭窄的点尺寸分布，典型的点直径为40±5 nm，直径与高度之比始终非常接近4:1。未封顶的CdSe圆点随着时间的推移是不稳定的：观察到它们的密度在10天内下降了一个数量级，并且有明显的证据表明一些圆点已经成熟。由于额外的侧向约束，封顶点的光致发光表明激子局部化比ZnCdSe/ZnSe量子阱强得多。
We report the formation of self‐assembling CdSe quantum dots during molecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microscopy measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 40±5 nm, and with a diameter‐to‐height ratio consistently very close to 4:1. Uncapped CdSe dots are unstable with time: their density was observed to drop by an order of magnitude in 10 days, with clear evidence of ripening observed for some dots. Photoluminescence from capped dots indicates exciton localization much stronger than in ZnCdSe/ZnSe quantum wells, due to the additional lateral confinement.