Surface modification of Si-containing polymers during etching for bilayer lithography
Surface modification of Si-containing polymers during etching for bilayer lithography
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DOI：
10.1016/s0167-9317(02)00482-3
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发表时间：
2002-07-01
影响因子：
2.3
通讯作者：
Gogolides, E
中科院分区：
文献类型：
--
作者：
Eon, D;de Poucques, L;Gogolides, E
通过 XPS 和实时椭圆光度术研究了 O-2 等离子体暴露下聚二甲基硅氧烷 (PDMS) 的表面改性。结果显示 PDMS 表面转化为 SiOx 类材料。 SiOx 层的总层厚度和延伸由样品偏压控制。我们认为，在双层光刻中使用 PDMS 作为顶层时出现的表面和线边缘粗糙度缺陷与快速转化动力学以及表面上 SiOx 硬微掩模的形成密切相关。 (C) 2002 Elsevier Science B.V. 保留所有权利。
Surface modification of polydimethylsiloxane (PDMS) under O-2 plasma exposure is studied by XPS and real time ellipsometry. Results show the conversion of the PDMS surface into a SiOx-like material. Total layer thickness and extension of the SiOx layer are controlled by the sample bias. We suggest that surface and line edge roughness defects occurring when using PDMS as top layer in bilayer lithography are intimately related to the rapid kinetics of conversion and to the formation of SiOx hard micromasks on the surface. (C) 2002 Elsevier Science B.V. All rights reserved.