High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors
High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors
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DOI：
10.1002/adma.201404495
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发表时间：
2015-03-25
影响因子：
29.4
通讯作者：
Loi, Maria Antonietta
中科院分区：
文献类型：
--
作者：
Nugraha, Mohamad Insan;Haeusermann, Roger;Loi, Maria Antonietta
采用SiO_2和Cytop作为栅介质，研制了双栅PbS双栅场效应晶体管。所获得的电子迁移率（0.2 cm（2）V-1 s（-1））和高开/关比（10（5）-10（6））表明，受控的自组装（用自组装单层获得）以及陷阱密度降低（使用Cytop作为电介质）是纳米晶体未来应用的关键步骤。
Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V-1 s(-1)) and the high on/off ratio (10(5)-10(6)), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.