Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs.
Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs.
复制标题
氢端金刚石 MOSFET 的欧姆接触电阻、表面电阻和沟道电阻的研究。
DOI：
10.1109/ted.2022.3140699
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发表时间：
2022
影响因子：
3.1
通讯作者：
Yasuo Koide
中科院分区：
文献类型：
--
作者：
Jiangwei Liu;Hirotaka Ohsato;Bo Da;Yasuo Koide
The ohmic contact resistance (), surface resistance (), and channel resistance () of hydrogen-terminated diamond (H-diamond) MOSFETs were investigated in this study. Planar-type and T-type H-diamond MOSFETs were employed to analyze them. Because no interspaces exist between the source–drain and gate electrodes for the T-type H-diamond MOSFETs, thenis zero. Both planar-type and T-type MOSFETs show low leakage current densities and good operations. By considering the relationships between the total resistance () and 1/gate voltage-threshold voltage,andfor the T-type H-diamond MOSFET at a gate voltage of −10.0 V are determined to be 13.8 and 21.8mm, respectively. Asfor both MOSFETs is the same,andfor the planar-type H-diamond MOSFET are deduced to be 90.0 and 15.8mm, respectively.accounts for 75.3% offor the planar-type H-diamond MOSFET, which is the main reason for its lower drain current and extrinsic transconductance than those of the T-type MOSFET. Althoughis suppressed for the T-type H-diamond MOSFET,occupies 38.8% of. To further improve the performance of the H-diamond MOSFETs, it is important to eliminateand decreaseto further improve the electrical properties of the H-diamond MOSFETs.
