Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers
Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers
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DOI：
10.1063/1.2136428
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发表时间：
2005-11
影响因子：
4
通讯作者：
K. Ohtani;K. Fujita;H. Ohno
中科院分区：
文献类型：
--
作者：
K. Ohtani;K. Fujita;H. Ohno
报道了工作在10μm波段的中红外InAs闪烁AlGaSb超晶格量子级联激光器。激光器结构采用固体源分子束外延生长在n-InAs（100）衬底上。一个InAs闪烁AlGaSb啁啾超晶格结构，提供了一个大的振荡器强度和快速的载流子减少作为有源部分。在80 K时，观察到的最小阈值电流密度为0.7kA·cm ~ 2，脉冲工作时的最高工作温度为270 K。估算了InAs等离子体激元波导的波导损耗，并讨论了决定工作温度的因素。
We report on the demonstration of mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers operating at 10μm. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs∕AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80K is 0.7kA∕cm2, and the maximum operation temperature in pulse mode is 270K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.