Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics
Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics
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DOI：
10.1021/acs.nanolett.6b04332
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发表时间：
2017-02-01
期刊：
影响因子：
10.8
通讯作者：
Li, Mo
中科院分区：
文献类型：
--
作者：
Chen, Che;Youngblood, Nathan;Li, Mo
我们展示了在硅光子学和金属纳米等离子体结构的混合三维结构中集成黑磷光电探测器。这种集成方法结合了硅波导的低传播损耗、等离子体纳米隙的高场约束和黑磷的窄带隙的优点，实现了对电信波段近红外光探测的高响应性。得益于超短通道（类似于60 nm）和纳米间隙结构实现的近场增强，光电探测器显示出内部增益机制提供的高达10 A/W的固有响应率，以及150mhz的3db滚降频率。该器件展示了三种不同光子系统片上集成的有前途的方法，作为通用平台，可能会导致未来纳米光子在生物传感、非线性光学和光信号处理方面的应用。
We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (similar to 60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.