Effect of etch holes on the capacitance and pull-in voltage in MEMS tunable capacitors
Effect of etch holes on the capacitance and pull-in voltage in MEMS tunable capacitors
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DOI：
10.1080/00207217.2010.488911
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发表时间：
2010-11
影响因子：
1.3
通讯作者：
Dong-ming Fang;Xiuhan Li;Q. Yuan;Haixia Zhang
中科院分区：
文献类型：
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作者：
Dong-ming Fang;Xiuhan Li;Q. Yuan;Haixia Zhang
微电子机械系统(MEMS)的可调电容、开关或执行器广泛应用于无线通信系统中。在制作过程中，利用刻蚀孔来释放结构较大的牺牲层，这对器件的性能有明显的影响。然而，大多数研究人员在设计电容器、开关或执行器时忽略了这一影响。本文给出了刻蚀孔可调电容器电容的理论计算，并分析了不同参数，如刻蚀孔长w、刻蚀孔长wh、两片之间的气隙d、刻蚀孔数等参数对电容和吸合电压的影响。为了验证本文的理论，采用表面微机械加工技术制作了可调谐电容器。理论计算结果与实验结果吻合较好。
Microelectromechanical systems (MEMS) tunable capacitors, switches or actuators are widely applied in wireless communication systems. In the fabrication process etch holes are used to release the sacrificial layer with relatively large structures, which obviously affects the performance of devices. However, most researchers neglect this effect during their designing of the capacitors, switches or actuators. This article presents the theoretical calculation of the capacitance of tunable capacitors with etch holes, and analyses the deviation of the capacitance and pull-in voltage with different parameters such as the length of the plates w, the length of the etch holes w h, the air gap between the two plates d, and the number of the etch holes. To validate the theory in this article, a tunable capacitor was fabricated by surface micromachined technology. The theoretical results compare well with the experimental results.