Role of hole playing in improving performance of organic light-emitting devices with an Al2O3 layer inserted at the cathode-organic interface
Role of hole playing in improving performance of organic light-emitting devices with an Al2O3 layer inserted at the cathode-organic interface
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DOI：
10.1063/1.2220013
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发表时间：
2006-07
影响因子：
4
通讯作者：
Saifeng Zhang;Y. C. Zhou;J. Zhao;Y. Zhan;Z. Wang;Y. Wu;X. Ding;X. Hou
中科院分区：
文献类型：
--
作者：
Saifeng Zhang;Y. C. Zhou;J. Zhao;Y. Zhan;Z. Wang;Y. Wu;X. Ding;X. Hou
空穴在提高电子注入的存在下，在有机-阴极界面的Al 2 O3层的作用进行了讨论。根据有机电致发光器件中的隧穿势垒降低模型和载流子输运机理，推测只有在有机-缓冲层界面注入和积累空穴，才能增强电子注入。实验结果很好地证实了该分析的有效性。该模型也很好地解释了所观察到的工作电压随Al 2 O3层厚度变化的异常特性和效率的提高。
The role of hole playing in improving electron injection in the presence of an Al2O3 layer at the organic-cathode interface is discussed. It is deduced that, according to the model of tunneling barrier reduction and the carrier transporting mechanism in organic light-emitting devices, electron injection will be enhanced only if holes are injected and accumulated at the organic-buffer interface. The validity of this analysis is well confirmed by experimental results. The observed abnormal characteristic of operating voltage varying with the Al2O3 layer thickness and the efficiency improvement are also well explained by the model.