NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
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DOI：
10.1116/1.4868634
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
Dongyuan Zhang;S. Nozaki;K. Uchida
中科院分区：
文献类型：
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作者：
Dongyuan Zhang;S. Nozaki;K. Uchida
氧化镍（NiO）是少数几种显示p型导电性的金属氧化物半导体之一，并且可以与n型半导体组合以制造pn二极管。在这项研究中，同种型和异质型异质结二极管制造的紫外线（UV）氧化在350 °C的金属镍沉积在p-和n-Si基板。NiO/p-Si二极管的I-V特性不显示整流，而NiO/n-Si二极管的I-V特性显示整流，在2 V和−2 V的电流之间存在两个数量级的差异。NiO/n-Si的线性C−2 -V特性和二次离子质谱曲线证实，UV氧化温度足够低，不会影响Si内部深处。发现在相同温度下，通过在UV照射下氧化Ni形成的NiO层比通过在没有UV照射的情况下热氧化Ni形成的NiO层更导电，并且更适合于二极管制造。由于氧化温度相对较低，且可在一定程度上降低氧化温度。
Nickel oxide (NiO) is one of few metal-oxide semiconductors showing a p-type conductivity and can be combined with an n-type semiconductor to fabricate a pn diode. In this study, isotype and anisotype heterojunction diodes were fabricated by ultraviolet (UV) oxidation at 350 °C of metallic Ni deposited on p- and n-Si substrates. The I-V characteristics of the NiO/p-Si diode do not show rectification, while those of the NiO/n-Si diode show rectification with a difference of two orders of magnitude between the currents at 2 and −2 V. The linear C−2 -V characteristics of the NiO/n-Si and secondary ion mass spectroscopy profile confirm that the UV oxidation temperature is low enough so as not to affect deep inside the Si. The NiO layers formed by the oxidation of Ni under UV illumination are found to be more conductive and more suitable for the diode fabrication than those by the thermal oxidation of Ni without UV illumination at the same temperature. Because the oxidation temperature is relatively low and ca...