Evidence for dislocations or related defects present in CdTe and Cd1-xZnxTe crystals
Evidence for dislocations or related defects present in CdTe and Cd1-xZnxTe crystals
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DOI：
10.1117/12.450770
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发表时间：
2001-12
期刊：
影响因子：
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通讯作者：
S. Awadalla;A. Hunt;Russell B. Tjossem;K. Lynn;C. Szeles;M. Bliss
中科院分区：
文献类型：
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作者：
S. Awadalla;A. Hunt;Russell B. Tjossem;K. Lynn;C. Szeles;M. Bliss
利用热电效应谱和热激电流测量研究了垂直布里奇曼法和高压布里奇曼法生长的半绝缘CdTe和Cd_（1-x）Zn_xTe晶体中的陷阱能级。不同生长方法的晶体具有不同的位错密度和Zn浓度。这些水平的热电离能提取使用可变加热速率和初始上升的方法，然后使用温度最大值法计算的捕获截面。我们在这里报告，在E1=0.11+/- 0.02和E2=0.17+/- 0.02 eV的浅能级观察到的是内在的，后者的水平是最有可能与位错密度。
Thermoelectric Effect Spectroscopy and Thermally Stimulated Current measurements were used to investigate trapping levels in a semi-insulating CdTe and Cd1-xZnxTe crystals from multiple ingots grown by vertical Bridgman with over pressure control and high-pressure Bridgman methods. The crystals from different growth methods have different dislocation densities as well as Zn concentrations. The thermal ionization energies of these levels were extracted using both the variable heating rate and initial rise methods; the trapping cross sections were then calculated using the temperature maximum method. We report here that the shallow levels observed at E1=0.11+/- 0.02 and E2=0.17+/- 0.02 eV are intrinsic and the latter level is most likely related to the dislocation density.