Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides
Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides
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DOI：
10.1063/1.4926966
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发表时间：
2015-07
期刊：
影响因子：
1.6
通讯作者：
I. Yonenaga;Y. Ohkubo;M. Deura;K. Kutsukake;Y. Tokumoto;Y. Ohno;A. Yoshikawa;Xinqiang Wang
中科院分区：
文献类型：
--
作者：
I. Yonenaga;Y. Ohkubo;M. Deura;K. Kutsukake;Y. Tokumoto;Y. Ohno;A. Yoshikawa;Xinqiang Wang
采用纳米压痕法在室温下测量了厚度为0.5~4μm的纤锌矿氮化铟(InN)薄膜的硬度。用X射线衍射仪研究了InN薄膜的结晶质量，测得In(0001)-和N(0001)-生长面的硬度为8.8±0.4 Gpa，杨氏模数为184±5 Gpa。体积和剪切模数分别为99±3和77±2 GPa.泊松比为0.17±0.03。结果与InN以及其他氮化铝和氮化镓的数据进行了比较全面的检验。根据氮化物和纤锌矿氧化锌的原子键和位错能，研究了决定模数和硬度的潜在物理过程。
The hardness of wurtzite indium nitride (α-InN) films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001)- and N (0001)-growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.