Barrier-assisted ion beam synthesis of transfer-free graphene on an arbitrary substrate
Barrier-assisted ion beam synthesis of transfer-free graphene on an arbitrary substrate
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任意基底上的势垒辅助离子束合成无转移石墨烯
DOI：
10.1063/1.5121560
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发表时间：
2019
影响因子：
4
通讯作者：
Ding Guqiao
中科院分区：
文献类型：
--
作者：
Wang Gang;Liu Zhiduo;Yang Siwei;Zheng Li;Li Jiurong;Zhao Menghan;Zhu Wei;Xu Anli;Guo Qinglei;Chen Da;Ding Guqiao
与通常使用的化学气相沉积（CVD）合成，导致多层石墨烯生长的碳（C）从镍（Ni），我们提出了一种可控的策略，通过离子注入技术，在任意衬底上合成石墨烯，其中所获得的石墨烯薄膜的层数是由相应的注入C离子的剂量精确控制。具体而言，氧化物层（NiO）被引入作为阻挡层，以防止注入的C原子在表面但在界面处沉淀。就传统CVD而言，各种不寻常的衬底（例如蓝宝石、玻璃、SiO2和Si）已被用于生长高质量石墨烯。采用生长的石墨烯/Si，肖特基结为基础的光电探测器具有高响应率（63 mA W−1）和高检测率（1.4 × 1010 cm Hz 1/2 W−1）在1550 nm的证明，而不需要任何后转移过程，从而避免额外的污染，复杂性和成本在设备制造。我们的工作提供了一种在任意衬底上生长石墨烯的通用技术，具有可控的层数和无转移的光电器件制造，从而加速了它们在电光器件中的进一步实际应用。与通常使用的化学气相沉积（CVD）合成不同，化学气相沉积（CVD）合成导致通过从镍（Ni）合成碳（C）来生长多层石墨烯，提出了一种通过离子注入技术在任意衬底上合成石墨烯的可控策略，其中所获得的石墨烯薄膜的层数由注入的C离子的相应剂量精确控制。具体而言，氧化物层（NiO）被引入作为阻挡层，以防止注入的C原子在表面但在界面处沉淀。就传统CVD而言，各种不寻常的衬底（例如蓝宝石、玻璃、SiO2和Si）已被用于生长高质量石墨烯。采用生长的石墨烯/Si，肖特基结为基础的光电探测器具有高响应率（63 mA W−1）和高探测率（1.4 × 1010 cm Hz 1/2 W−1），在1550 nm，不需要任何后转移过程中，从而避免了额外的污染，复杂性和成本在设备...
In distinction to the generally utilized chemical vapor deposition (CVD) synthesis that leads to multilayer graphene growth by carbon (C) synthesis from nickel (Ni), we proposed a controllable strategy to synthesize graphene on an arbitrary substrate through ion implantation technology, where the layer number of the obtained graphene film is accurately controlled by the corresponding dose of implanted C ions. To be specific, an oxide layer (NiO) was introduced as the barrier to prevent implanted C atom precipitation at the surface but at the interface. Various unusual substrates (such as sapphire, glass, SiO2, and Si), in terms of traditional CVD, have been utilized for growing high-quality graphene. Employing the as-grown graphene/Si, Schottky junction-based photodetectors with high responsivity (63 mA W−1) and high detectivity (∼1.4 × 1010 cm Hz1/2 W−1) at 1550 nm are demonstrated without requiring any post-transfer process, thus avoiding additional contaminations, complexities, and costs during device fabrications. Our works afford a versatile technique for growing graphene on arbitrary substrates, with controllable layer numbers and transfer-free optoelectronic device fabrications, thus accelerating their further practical applications in electro-optical devices.In distinction to the generally utilized chemical vapor deposition (CVD) synthesis that leads to multilayer graphene growth by carbon (C) synthesis from nickel (Ni), we proposed a controllable strategy to synthesize graphene on an arbitrary substrate through ion implantation technology, where the layer number of the obtained graphene film is accurately controlled by the corresponding dose of implanted C ions. To be specific, an oxide layer (NiO) was introduced as the barrier to prevent implanted C atom precipitation at the surface but at the interface. Various unusual substrates (such as sapphire, glass, SiO2, and Si), in terms of traditional CVD, have been utilized for growing high-quality graphene. Employing the as-grown graphene/Si, Schottky junction-based photodetectors with high responsivity (63 mA W−1) and high detectivity (∼1.4 × 1010 cm Hz1/2 W−1) at 1550 nm are demonstrated without requiring any post-transfer process, thus avoiding additional contaminations, complexities, and costs during device ...