High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon
High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon
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DOI：
10.1063/1.2773987
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发表时间：
2007-08-20
影响因子：
4
通讯作者：
Lee, C. H.
中科院分区：
文献类型：
--
作者：
Arulkumaran, S.;Ng, G. I.;Lee, C. H.
研究了AlGaN/GaN高电子迁移率晶体管(HEMT)在3、6和8 GHz不同微波频率下在高阻硅上的高温功率特性。HR-Si基AlGaN/GaN HEMTs的器件输出功率密度随温度的降低与半绝缘碳化硅衬底AlGaN/GaN HEMTs的输出功率密度随温度的降低几乎相同。经过高温应力后，在3 GHz处的功率性能有很小的退化。此外，测量频率对P-OUT随温度下降的速率影响不大。研究了Si3N4钝化AlGaN/GaN HEMT的陷阱辅助碰撞电离和温度辅助隧穿的导电机制。HR-Si衬底上的AlGaN/GaN HEMT也可用于高温下的高功率和高频应用。(C)2007年美国物理研究所。
High temperature power performance of AlGaN/GaN high-electron-mobility transistor (HEMT) on high-resistivity-(HR) Si for different microwave frequencies of 3, 6, and 8 GHz was studied. The device output power density (P-out) reduction with temperature for HR-Si-based AlGaN/GaN HEMTs is almost equivalent to the P-out reduction with temperature for semi-insulating-SiC substrate based AlGaN/GaN HEMTs. After high temperature stress, very small degradation was observed in the power performance at 3 GHz. Moreover, the rate of P-out decrease with the temperature is not much affected by measurement frequencies. The conduction mechanism of trap assisted impact ionization and temperature assisted tunneling were identified on Si3N4 passivated AlGaN/GaN HEMTs. The AlGaN/GaN HEMTs on HR-Si can also be used for high-power and high-frequency applications at elevated temperatures. (C) 2007 American Institute of Physics.