Magnetoresistance in nanocontacts formed in NiFe thin films
Magnetoresistance in nanocontacts formed in NiFe thin films
复制标题
NiFe 薄膜中形成的纳米接触的磁阻
DOI：
10.1063/1.2828618
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发表时间：
2008
影响因子：
3.2
通讯作者：
Y. Ohsawa
中科院分区：
文献类型：
--
作者：
Y. Ohsawa
磁电阻（MR）和电流驱动的电导变化的测量在NiFe纳米接触在离子束溅射薄膜的初始生长阶段进行。观察到约1nm 2接触的电导变化与电流驱动测量的电导变化相同的MR比高达约140%。此外，由于它在基于先前报告的接触尺寸依赖于MR比的经验拟合中如此良好地对准，因此推断出畴壁对于大MR起重要作用。
Magnetoresistance (MR) and current-driven conductance change measurements in NiFe nanocontacts in ion-beam-sputtered thin films at the initial growth stage were performed. A MR ratio of as large as about 140% with about 1nm2 contact whose conductance change was the same as that of current-driven measurements was observed. Furthermore, as it aligned so well in the empirical fit of the contact size dependence to MR ratio based on the previous reports, it was deduced that domain wall plays an important role with respect to the large MR.