Preparation and Faraday effect of EuS microcrystal-embedded oxide thin films
Preparation and Faraday effect of EuS microcrystal-embedded oxide thin films
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EuS微晶嵌入氧化物薄膜的制备及法拉第效应
DOI：
10.1063/1.1339217
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发表时间：
2001
影响因子：
3.2
通讯作者：
K. Hirao
中科院分区：
文献类型：
--
作者：
Katsuhisa Tanaka;Naoki Tatehata;K. Fujita;K. Hirao
采用射频溅射法制备了EuS微晶镶嵌的SiO2、Al 2 O3和TiO 2薄膜。X射线衍射分析表明，EuS微晶在Al 2 O3和TiO 2薄膜中均以单相形式析出，而在SiO2薄膜中未检测到EuS的析出。在Al_2O_3和TiO_2薄膜中观察到Eu 2+在EuS微晶相中的4f 7 - 4f 65 d跃迁引起的法拉第效应。特别是，观察到的法拉第旋转角为EuS嵌入的TiO 2膜是大的，例如，Verdet常数的大小为沉积的TiO 2膜制备过程中没有加热的基板在溅射是0.15度/厘米Oe在波长为700 nm。 该值比在含稀土玻璃中显示最大法拉第旋转角的含Eu 2+或Tb 3+的氧化物玻璃的值大两个数量级，并且与EuSe单晶的值相当。
EuS microcrystal-embedded SiO2, Al2O3, and TiO2 thin films have been prepared by using rf sputtering method. X-ray diffraction analysis indicates that EuS microcrystal is precipitated as a single phase in Al2O3 and TiO2 films while precipitation of EuS is not detected in SiO2 film. Faraday effect attributable to the 4f7–4f65d transition of Eu2+ in EuS microcrystalline phase is observed in Al2O3 and TiO2 films. In particular, Faraday rotation angle observed for EuS-embedded TiO2 film is large; for instance, the magnitude of Verdet constant for as-deposited TiO2 film prepared without heating of substrate during the sputtering is 0.15 deg/cm Oe at wavelength of 700 nm. This value is larger by two orders of magnitude than those of Eu2+- or Tb3+-containing oxide glasses which show the largest Faraday rotation angle among rare-earth-containing glasses, and is comparable to the value for EuSe single crystal.