Nitrogen composition dependence of electron effective mass in GaAs1-xNx
Nitrogen composition dependence of electron effective mass in GaAs1-xNx
复制标题
GaAs1-xNx 中电子有效质量的氮成分依赖性
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
R. Goldman
中科院分区：
文献类型：
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作者：
T. Dannecker;Y. Jin;H. Cheng;C. F. Gorman;J. Buckeridge;C. Uher;S. Fahy;Ç. Kurdak;R. Goldman
我们已经调查了N的组合物，x，和温度，T，依赖的电子有效质量，m*，GaAs 1-x Nx薄膜具有足够低的载流子浓度，预计将被限制在底部附近的导带边缘（CBE）。使用Seebeck和Hall测量，结合抛物线带和费米-狄拉克统计的假设，我们发现m* 对x的非单调依赖性和m* 随x的增加的T依赖性。这些趋势不是由两态带反交叉模型预测的，而是与共振氮态模型的线性组合的预测相一致，该模型考虑了几个N相关的状态及其与GaAs CBE的相互作用。
We have investigated the N composition, x , and temperature, T , dependence of the electron effective mass, m*, of GaAs1-x Nx films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m* on x and an increasing T dependence of m* with x . These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE.