Backward diode behavior in oxygen-excessive manganite-titanate p-n junction

Backward diode behavior in oxygen-excessive manganite-titanate p-n junction
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DOI：
10.1209/0295-5075/87/57006
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发表时间：
2009-09
期刊：
EPL (Europhysics Letters)
影响因子：
--
通讯作者：
Y. Xie;J. Sun;D. Guo;B. Shen;X. Y. Zhang
Y. Xie;J. Sun;D. Guo;B. Shen;X. Y. Zhang
中科院分区：
其他
文献类型：
--
作者：
Y. Xie;J. Sun;D. Guo;B. Shen;X. Y. Zhang

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采用脉冲激光沉积技术制备了La0.9Ca0.1MnO3薄膜和掺Nb 1wt%的SrTiO 3衬底组成的结。将几个结在O2流中在900 °C下退火10小时。对这些结的电流-电压特性的研究表明，退火后的结表现出强烈的反向二极管行为，这种行为发生在小偏压（±1.05 V）下，并随着温度的升高而逐渐消失，直到50 K。作为比较，在未退火的结中没有观察到反向二极管行为。漏电流的抑制被认为是本结中反向二极管行为的原因。
Junctions composed of La0.9Ca0.1MnO3 film and 1 wt% Nb-doped SrTiO3 substrate were fabricated using pulsed-laser deposition technique. Several junctions were annealed in O2 flow at 900 °C for 10 hours. Studies on the current-voltage characteristics of these junctions showed that the annealed junctions exhibit strong backward diode behavior that takes place for small bias (within ±1.05 V) and gradually vanishes with increasing temperature up to 50 K. As a comparison, no backward diode behavior was observed in the unannealed junctions. The depression of leakage current is believed to be responsible for the backward diode behavior in the present junctions.