A real space investigation of the dimer defect structure of Si(001)‐(2times8)
A real space investigation of the dimer defect structure of Si(001)‐(2times8)
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Si(001)-(2times8)二聚体缺陷结构的真实空间研究
DOI：
10.1111/j.1365-2818.1988.tb01444.x
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发表时间：
1988
影响因子：
2
通讯作者：
J. Demuth
中科院分区：
文献类型：
--
作者：
H. Niehus;U. Köhler;M. Copel;J. Demuth
利用扫描隧道显微镜在真实的空间中直接成像了Si（001）-（2 × 8）表面的原子排列。超结构是杂质诱导的，并且仅用1%的Ni稳定。清洁的Si（001）表面不形成（2 times 8）相。STM形貌图的二维傅立叶变换与（2 times 8）LEED图案很好地对应，但实际上真实的空间图像比之前基于最近的衍射技术测量得出的结论要复杂得多。STM图像清楚地表明，（2 times 8）表面由一个复杂的缺失的二聚体结构，即一个和多个二聚体空位。这样的二聚体缺陷似乎与Ni杂质相关，并且与可能通过第三层二聚化产生准有序“通道”的二聚体缺陷的有序化密切相关。
The atomic arrangement of the Si(001)‐(2 times 8) surface has been directly imaged in real space by scanning tunnelling microscopy. The superstructure is impurity induced and stablilized by as little as 1% Ni. Clean Si(001) surfaces do not form the (2times8) phase. The two‐dimensional Fourier transforms of the STM topographs correspond well to the (2times8) LEED pattern, but the real space images are in fact considerably more complex than previously concluded on the basis of recent diffraction technique measurements. The STM images clearly demonstrate that the (2times8) surface consists of a complex missing dimer structure, namely one and multiple dimer vacancies. Such a dimer defect appears related to the Ni impurity and intimately related to the ordering of the dimer defects probably by third layer dimerization to produce quasi‐ordered ‘channels’.