Direct electric field imaging of graphene defects.
Direct electric field imaging of graphene defects.
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DOI：
10.1038/s41467-018-06387-8
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发表时间：
2018-09-24
影响因子：
16.6
通讯作者：
Shibata N
中科院分区：
文献类型：
--
作者：
Ishikawa R;Findlay SD;Seki T;Sánchez-Santolino G;Kohno Y;Ikuhara Y;Shibata N
材料的性质对空位或杂质等原子结构缺陷很敏感，因此不仅要确定局部原子构型，还要确定它们的化学键状态。利用环形暗场扫描透射电子显微镜（STEM）结合电子能量损失能谱技术，研究了这种缺陷的局部电子结构，直到单原子水平。然而，由于来自单个原子的电子精细结构信号非常微弱，因此对局部键态的二维映射仍然具有挑战性。在这里，我们证明了原子分辨率差相对比STEM成像可以直接显示单层石墨烯中单硅原子电场的各向异性。我们还可视化了石墨烯中Stone-Wales缺陷和纳米孔的原子电场。我们的研究结果为在原子尺度上直接研究材料中缺陷结构的局部化学开辟了道路。成像缺陷石墨烯的化学键态对确定其功能特性非常重要。在这里，作者报告了由硅诱导的单层石墨烯中的三角形和矩形原子电场，并通过差相对比STEM成像。
Material properties are sensitive to atomistic structure defects such as vacancies or impurities, and it is therefore important to determine not only the local atomic configuration but also their chemical bonding state. Annular dark-field scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy has been utilized to investigate the local electronic structures of such defects down to the level of single atoms. However, it is still challenging to two-dimensionally map the local bonding states, because the electronic fine-structure signal from a single atom is extremely weak. Here, we show that atomic-resolution differential phase-contrast STEM imaging can directly visualize the anisotropy of single Si atomic electric fields in monolayer graphene. We also visualize the atomic electric fields of Stone–Wales defects and nanopores in graphene. Our results open the way to directly examine the local chemistry of the defective structures in materials at atomistic dimensions. Imaging chemical bonding states in defective graphene is important to determine its functional properties. Here, the authors report triangular and rectangular atomic electric fields in monolayer graphene induced by silicon as imaged by differential phase contrast STEM.
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影响因子：
16.6
作者：
Mueller, Knut;Krause, Florian F.;Beche, Armand;Schowalter, Marco;Galioit, Vincent;Loeffler, Stefan;Verbeeck, Johan;Zweck, Josef;Schattschneider, Peter;Rosenauer, Andreas
通讯作者：
Rosenauer, Andreas
影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
Furthmuller, J
影响因子：
64.8
作者：
Krivanek, Ondrej L.;Chisholm, Matthew F.;Pennycook, Stephen J.
通讯作者：
Pennycook, Stephen J.
影响因子：
16.6
作者：
Shibata N;Seki T;Sánchez-Santolino G;Findlay SD;Kohno Y;Matsumoto T;Ishikawa R;Ikuhara Y
通讯作者：
Ikuhara Y
石墨烯纳米孔的稳定性
DOI：
10.1073/pnas.1400767111
发表时间：
2014-05-27
影响因子：
11.1
作者：
Lee, Jaekwang;Yang, Zhiqing;Chisholm, Matthew F.
通讯作者：
Chisholm, Matthew F.