SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES
SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES
复制标题
碳化硅功率器件的系统影响
DOI：
10.1142/s0129156402001368
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发表时间：
2002
影响因子：
--
通讯作者：
M. Hasanuzzaman
中科院分区：
文献类型：
--
作者：
B. Ozpineci;L. Tolbert;S. Islam;M. Hasanuzzaman
基于碳化硅（SiC）的功率半导体开关的出现，与基于硅（Si）的开关相比，具有更优越的特性，导致了电力电子转换系统性能的实质性改善。这些具有SiC功率器件的系统具有更紧凑、更轻、更高效的特点；因此，它们是高压电力电子应用的理想选择，例如混合动力电动汽车（HEV）牵引驱动。需要更多的研究来证明SiC器件在功率转换系统中的影响。在本研究中，将给出橡树岭国家实验室（ORNL）的SiC研究成果，包括SiC器件设计和系统建模研究。
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL) including SiC device design and system modeling studies, will be given.