Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
复制标题
用于微机电系统 (MEMS) 传感器应用的 GaAs-on-Si 衬底的优化
DOI：
10.3390/ma5122917
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发表时间：
2012-12-17
期刊：
影响因子：
3.4
通讯作者：
Yu Y
中科院分区：
文献类型：
--
作者：
Shi Y;Guo H;Ni H;Xue C;Niu Z;Tang J;Liu J;Zhang W;He J;Li M;Yu Y
在基于GaAs的MEMS传感器中，基于GaAs的谐振式隧穿二极管（RTD）和高电子迁移率晶体管（HEMT）作为压阻式传感元件，具有极高的灵敏度。为了进一步拓展其在基于Si的MEMS传感器领域的应用，我们研究了Si晶片上GaAs外延层的优化。采用了匹配超晶格和应变超晶格，表面缺陷密度提高了两个数量级。结合拉曼光谱对残余应力进行了表征，实验结果表明，与原始基底相比，残余应力降低了50%。该方法为优化Si衬底上的外延GaAs层提供了一种解决方案，这也将优化我们未来基于Si衬底上GaAs的MEMS传感器应用集成RTD和HEMT的工艺。
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.