Atomic Layer Deposition of TaN, NbN, and MoN Films for Cu Metallizations
Atomic Layer Deposition of TaN, NbN, and MoN Films for Cu Metallizations
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用于铜金属化的 TaN、NbN 和 MoN 薄膜的原子层沉积
DOI：
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
P. Alén
中科院分区：
文献类型：
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作者：
P. Alén
过渡金属氮化物、金属硅化物和金属氮化硅被认为是下一代超大规模集成（ULSI）微电子中最有前途的扩散阻挡材料。半导体工业长期以来一直使用Ti、Ta和W基材料，它们的材料性能已经得到了很好的研究。最近，钽基材料引起了特别的兴趣。基于其他过渡金属的材料的势垒特性研究很少。在这项工作中，沉积了氮化钽薄膜，并使用了四种新的还原剂来还原钽并获得所需的TaN相。并对氮化铌和钼薄膜的沉积进行了研究。所有薄膜均采用原子层沉积（ALD）方法沉积，保证了薄膜的良好一致性和大面积均匀性。ALD沉积钽薄膜的问题在于，在挥发性钽前驱体中，钽通常以氧化态+V存在，难以还原为立方钽所需的+III态。新的还原剂有三甲基铝（TMA）、叔丁胺（BuNH2）、烯丙胺（allylNH2）和三（二甲胺）硅烷（TDMAS）。除还原钽外，TMA还作为碳源和铝源，BuNH2和allylNH2作为氮源，TDMAS作为硅前驱体。在较低的温度下研究了氮化铌和氮化钼薄膜的ALD。以氨为氮源，以相应的金属氯化物前驱体（NbCl5和MoCl5）沉积NbNx和MoNx膜。不需要额外的还原剂。研究了沉积膜的沉积参数、组成、结晶度和电学性能。研究了Ta(Al)N(C)、NbNx和MoNx薄膜的势垒特性。测量了在两种不同温度下沉积的Ta(Si)N薄膜的功函数值。
Transition metal nitrides, metal silicides, and metal-silicon-nitrides are considered the most promising diffusion barrier materials for next generation ultra large scale integration (ULSI) microelectronics. The semiconductor industry has long used Ti, Ta, and W based materials, and their material properties have been very well studied. Recently, tantalum-based materials have been attracting particular interest. The barrier properties of materials based on other transition metals have been little studied. In this work, tantalum nitride films were deposited, with four new reducing agents used to reduce tantalum and obtain the desired TaN phase. As well, the deposition of niobium and molybdenum nitride films was investigated. All films were deposited by the atomic layer deposition (ALD) method, which ensures excellent conformality and large area uniformity of the films. The problem in depositing TaN films by ALD is that in volatile tantalum precursors the tantalum usually exists in oxidation state +V which is difficult to reduce to the +III state needed in cubic TaN. The new reducing agents examined in this study were trimethylaluminum (TMA), tert-butylamine (BuNH2), allylamine (allylNH2), and tris(dimethylamino)silane (TDMAS). In addition to reducing tantalum, TMA also acted as a carbon and aluminum source, BuNH2 and allylNH2 as nitrogen sources, and TDMAS as a silicon precursor. ALD of niobium nitride and molybdenum nitride films was studied at lower temperatures than reported earlier. Both NbNx and MoNx films were deposited from the corresponding metal chloride precursors (NbCl5 and MoCl5, respectively) using ammonia as nitrogen source. No additional reducing agent was required. The deposition parameters, compositions, crystallinity, and electrical properties were studied for all deposited films. Barrier characteristics were investigated for Ta(Al)N(C), NbNx, and MoNx films. The work function values were measured for Ta(Si)N films deposited at two different temperatures.
影响因子：
3.7
作者：
Whissell PD;Tohyama S;Martin LJ
通讯作者：
Martin LJ