Doping in quantum cascade lasers. II. GaAs∕Al0.15Ga0.85As terahertz devices
Doping in quantum cascade lasers. II. GaAs∕Al0.15Ga0.85As terahertz devices
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DOI：
10.1063/1.2234805
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发表时间：
2006-08
影响因子：
3.2
通讯作者：
L. Ajili;G. Scalari;M. Giovannini;N. Hoyler;J. Faist
中科院分区：
文献类型：
--
作者：
L. Ajili;G. Scalari;M. Giovannini;N. Hoyler;J. Faist
研究了GaAs闪烁Al_（0.15）Ga_（0.85）As太赫兹量子级联激光器在注入掺杂下的性能。阈值电流和掺杂之间的线性关系被发现，并同意由于自由载流子吸收的波导损耗的预期增加。
The performances of GaAs∕Al0.15Ga0.85As terahertz quantum cascade lasers based on a bound-to-continuum transition are investigated as a function of injector doping. A linear dependence between threshold current and doping is found and agrees with the expected increase of waveguide losses due to free carrier absorption.