Pyroelectric and Dielectric Properties of Mn Modified 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 Lead‐Free Thick Films
Pyroelectric and Dielectric Properties of Mn Modified 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 Lead‐Free Thick Films
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DOI：
10.1111/j.1551-2916.2009.03166.x
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发表时间：
2009-09
影响因子：
3.9
通讯作者：
Haibo Zhang;Shenglin Jiang;K. Kajiyoshi
中科院分区：
文献类型：
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作者：
Haibo Zhang;Shenglin Jiang;K. Kajiyoshi
采用丝网印刷法在铂电极氧化铝衬底上制备了厚度约40μm的MnO掺杂0.82Bi0.5Na0.5TiO3-0.18Bi0.5K0.5TiO3(NbTK0.5TiO3)厚膜。在1.0mol%MnO掺杂的厚膜中测得热释电系数为3.8×10−4C·(m2·°C)-1，探测优值为1.1×10−5Pa−0.5，可与常用的铅基材料相媲美。热释电性能的提高归因于介电常数和损耗的降低以及热释电系数的提高，这可以归因于Mn在NBT-KBT晶格中起到硬掺杂的作用，产生了氧空位并钉扎了剩余的磁畴。
MnO-doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3(NBT–KBT) thick films with thickness about 40 μm have been prepared using screen printing on Pt electroded alumina substrates. The strong pyroelectric coefficient of 3.8 × 10−4 C·(m2·°C)–1 was observed in 1.0 mol% MnO-doped-thick films, and the calculated detectivity figure of merit as high as 1.1 × 10−5 Pa−0.5, which can be comparable to that of the commonly used lead based materials. The enhancement of the pyroelectric performances is attributed to the reductions in dielectric constant and loss and the improvements in the pyroelectric coefficient, which can be ascribed to the Mn acts as a hard dopant in the NBT–KBT lattice, creating oxygen vacancies and pinning the residual domains.