Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots
Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots
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DOI：
10.1143/jjap.49.045203
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发表时间：
2010-04
影响因子：
1.5
通讯作者：
J. Ogi;T. Ferrus;T. Kodera;Y. Tsuchiya;K. Uchida;D. Williams;S. Oda;H. Mizuta
中科院分区：
文献类型：
--
作者：
J. Ogi;T. Ferrus;T. Kodera;Y. Tsuchiya;K. Uchida;D. Williams;S. Oda;H. Mizuta
为了研究和控制电子-声子相互作用的强度，制备了硅基悬浮双量子点。在单电子输运测量中观察到一个独特的和大的非弹性隧穿，并很好地解释了由于在悬浮膜中的声子调制与电子强烈相互作用的声子的发射。第一次观察到的增强的电子-声子相互作用的Si SDQD以及实验结果和理论模拟之间的良好协议是令人鼓舞的初步结果，使我们能够设想观察定制的SDQD中的电子-声子相互作用。
Silicon-based suspended double quantum dots (SDQDs) were fabricated to study and control the strength of the electron–phonon interaction. A distinctive and large inelastic tunneling was observed in single-electron transport measurement and well explained by the emission of phonons that interact strongly with electrons owing to the phonon modulation in the suspended film. The first time observation of the enhancement of the electron–phonon interaction in Si SDQDs as well as the good agreement between the experimental results and the theoretical simulations are encouraging preliminary results that allow us to envision the observation of the tailoring of the electron–phonon interaction in SDQDs.