Reductive Solid Phase Epitaxy of Layered Y2O2Bi with Bi2－ Square Net from (Y, Bi) Powders and Y2O3 Amorphous Thin Film
Reductive Solid Phase Epitaxy of Layered Y2O2Bi with Bi2－ Square Net from (Y, Bi) Powders and Y2O3 Amorphous Thin Film
复制标题
(Y, Bi)粉末和Y2O3非晶薄膜的Bi2－方网层状Y2O2Bi还原固相外延
DOI：
10.1021/cg5009297
复制
发表时间：
2014
影响因子：
3.8
通讯作者：
Tetsuya Hasegawa
中科院分区：
文献类型：
--
作者：
Ryosuke Sei;Tomoteru Fukumura;Tetsuya Hasegawa
提出了一种新颖的带bi2方网的thcr2si2型Y2O2Bi薄膜固相外延技术。在非氧化晶格匹配的caf2衬底上，在还原气氛下分两步加热了含有Y和Bi粉末的y2o3非晶薄膜。这一过程对于Y2O2Bi的外延生长是必不可少的，避免了与Bi3+形成c -稀土型（Y,Bi） 2o3。高氧化性的金属Y是实现Bi2 -不寻常还原状态的关键。晶格匹配的caf2衬底具有与Y2O2Bi中Y2O22+单元相似的结构，促进了薄膜的自发轴取向。
Ingenious solid phase epitaxy of ThCr2Si2-type Y2O2Bi thin film with a Bi2–square net was developed. A Y2O3amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3with Bi3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2–. The lattice-matched CaF2substrate possessing a similar structure to the Y2O22+unit in Y2O2Bi promoted the spontaneousc-axis orientation of the thin film.