Three-dimensional atom mapping of dopants in Si nanostructures
Three-dimensional atom mapping of dopants in Si nanostructures
复制标题
硅纳米结构中掺杂剂的三维原子图
DOI：
10.1063/1.2005368
复制
发表时间：
2005
影响因子：
4
通讯作者：
T. Kelly
中科院分区：
文献类型：
--
作者：
K. Thompsona;J. Booske;D. Larson;T. Kelly
原子探针断层扫描技术已成功绘制了经过各种处理程序的纳米级硅体积中的三维 (3D) 掺杂剂原子分布图。在注入的多晶硅栅极接触和注入的浅结中分析了掺杂剂的 3D 演化，特别是掺杂剂聚集和晶界偏析等效应。在三个多晶硅晶粒的交叉处发现了尺寸为 2×7×8nm3 且包含 264 个 B 原子的簇，验证了对高度过掺杂的薄多晶硅层进行退火并不能促进均匀掺杂和高导电性的栅极接触层。
Atom-probe tomography has successfully mapped three-dimensional (3D) dopant atom distributions in nanoscale volumes of Si subjected to various processing procedures. The 3D evolution of dopants, specifically effects such as dopant clustering and grain-boundary segregation, were analyzed in implanted polycrystalline Si gate contacts and implanted shallow junctions. A cluster of dimensions 2×7×8nm3 and containing 264 B atoms, was identified at the intersection of three poly-Si grains, verifying that annealing highly overdoped thin poly-Si layers does not facilitate uniformly doped and highly conductive gate contact layers.