Theoretical study of optical properties of anti phase domains in GaP
Theoretical study of optical properties of anti phase domains in GaP
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GaP反相域光学性质的理论研究
DOI：
10.1063/1.4864421
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发表时间：
2014
影响因子：
3.2
通讯作者：
O. Durand
中科院分区：
文献类型：
--
作者：
E. Tea;J. Vidal;L. Pédesseau;C. Cornet;J. Jancu;J. Even;S. Laribi;J. Guillemoles;O. Durand
III-V/Si异质结构目前被研究用于硅光子学和太阳能转换。特别地，在GaP/Si平台上生长的稀氮化物合金GaAsPN表现出与Si的晶格匹配和用于串联太阳能电池器件的最佳带隙配置。然而，在Si上差距薄层的单片“相干”生长受到扩展结构缺陷的成核的影响，这可能妨碍器件操作以及差距/Si界面水平和通过它们在整个异质结构内的传播。然而，这种结构缺陷对光学和输运性质的影响实际上并没有很好地了解细节。在这封信中，我们调查的反相畴缺陷（也称为反转域）的从头计算的装置，由于有缺陷的GaP/Si界面的GaP的光学和输运性质的改变的见解。
III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute nitride alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.