Magnetostriction and electrical resistivity of Si doped Tb0.3Dy0.7Fe1.95 oriented crystals
Magnetostriction and electrical resistivity of Si doped Tb0.3Dy0.7Fe1.95 oriented crystals
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DOI：
10.1063/1.2384800
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发表时间：
2006-11
影响因子：
4
通讯作者：
Lihong Xu;Chengbao Jiang;Huibin Xu
中科院分区：
文献类型：
--
作者：
Lihong Xu;Chengbao Jiang;Huibin Xu
研究了Tb0.3Dy0.7（Fe 1 −xSix）1.95（x= 0，0.025，0.1）晶体的铸态和取向的磁致伸缩和电学性能。在取向掺硅TbDyFeSi晶体中观察到了超磁致伸缩和明显的磁致伸缩跳跃效应，特别是当x=0.025时。在250 - 300 K温度范围内研究了铸态和取向TbDyFeSi的电导率。在铸态Si掺杂TbDyFeSi磁致伸缩合金中观察到电阻率的急剧增加，与传统Tb0.3Dy0.7Fe1.95相比，当x=0.025和0.1时，分别增加了66%和97%。取向合金的电导率略小于铸态合金。
Magnetostriction and the electrical resistivities of as-cast and ⟨110⟩ oriented crystals of Tb0.3Dy0.7(Fe1−xSix)1.95 (x=0,0.025,0.1) were investigated. Giant magnetostriction and obvious magnetostrictive jump effect were observed in oriented Si doped TbDyFeSi crystals especially for x=0.025. The electrical resistivities of both as-cast and ⟨110⟩ oriented TbDyFeSi were studied at the temperature range from 250to300K. Drastic increases of resistivity were observed in the as-cast Si doped TbDyFeSi magnetostrictive alloys with the increase ratios of 66% and 97% for x=0.025 and 0.1, respectively, compared with traditional Tb0.3Dy0.7Fe1.95 alloy. The electrical resistivities of oriented alloys are slightly smaller in comparison with that of the as-cast ones.