Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
复制标题
谐振隧道二极管中高达 200 GHz 的基本振荡以及根据稳态隧道理论对其最大振荡频率的新估计
DOI：
10.1063/1.341827
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发表时间：
1988
影响因子：
3.2
通讯作者：
T. Sollner
中科院分区：
文献类型：
--
作者：
E. Brown;W. Goodhue;T. Sollner
在室温下测得共振隧穿二极管的基波振荡频率高达200 GHz。二极管安装在WR-6波导谐振腔中，在102-112 GHz范围内振荡，在此范围内的峰值输出功率约为5μW。同样的二极管在192-201 GHz之间振荡，安装在WR-3谐振器中时产生约0.2μW的功率。假定耗尽层的平均漂移速度为4×10~7 cm S−1，估算出这些器件的最大振荡频率(Fmax)为244 GHz。这一估计是根据负差分电导的新唯象理论得到的，负差分电导解释了频率相关的扩展电阻和渡越时间延迟。该理论还被用来证明，只要改变双势垒结构两侧区域的掺杂分布，Fmax超过600 GHz的二极管就是可行的。
Fundamental oscillations have been measured up to 200 GHz in resonant‐tunneling diodes at room temperature. Oscillations in the range 102–112 GHz were achieved with diodes mounted in a WR‐6 waveguide resonator, and the peak output power in this range was approximately 5 μW. The same diodes oscillated between 192 and 201 GHz and generated about 0.2 μW when mounted in a WR‐3 resonator. The estimated maximum oscillation frequency ( fmax) for these devices is 244 GHz, assuming the average drift velocity across the depletion layer to be 4×107 cm s−1. This estimate has been obtained from a new phenomenological theory of the negative differential conductance which accounts for the frequency‐dependent spreading resistance and transit‐time delay. The theory is also used to show that diodes having fmax exceeding 600 GHz are feasible simply by modifying the doping profile in the regions on either side of the double‐barrier structure.