Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition
Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition
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DOI：
10.1063/1.4893298
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发表时间：
2014-08
影响因子：
3.2
通讯作者：
Seyram Gbordzoe;R. Kotoka;Eric Craven;Durgesh Kumar;Fan Wu;J. Narayan
中科院分区：
文献类型：
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作者：
Seyram Gbordzoe;R. Kotoka;Eric Craven;Durgesh Kumar;Fan Wu;J. Narayan
目前的工作报告的氮化钛（TiN）纳米线在单晶硅衬底上使用脉冲激光沉积方法的生长和微观结构表征。采用场发射扫描电子显微镜（FESEM）和透射电子显微镜（TEM）对纳米线的物理和微观结构进行了表征。采用直流动电位法和电化学阻抗法对TiN纳米线和TiN薄膜的腐蚀性能进行了比较。纳米线比TiN薄膜腐蚀得更快，因为纳米线具有更大的表面积，这使得它们在腐蚀性环境中更具反应性。从FESEM图像分析观察到，随着衬底温度从600 °C增加到800 °C，纳米线生长的直径（25 nm-50 nm）和长度（150 nm-250 nm）都增加。随着衬底温度的升高，空间密度也随之增加。TEM结果表明，TiN纳米线通过畴匹配外延模式与硅衬底外延生长，尽管有很大的失配。
The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit.