Gate tuning of anomalous Hall effect in ferromagnetic metal SrRuO3
Gate tuning of anomalous Hall effect in ferromagnetic metal SrRuO3
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DOI：
10.1063/1.4899145
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发表时间：
2014-10-20
影响因子：
4
通讯作者：
Iwasa, Yoshihiro
中科院分区：
文献类型：
--
作者：
Shimizu, Sunao;Takahashi, Kei S.;Iwasa, Yoshihiro
电场对铁磁性的影响为自旋电子学的最新进展提供了一个新的维度。报道了氧化物基铁磁性金属SrRuO_3薄膜输运特性的栅极控制。利用双电层晶体管结构和离子液体介质在5个单层厚度的SrRuO_3薄膜上施加强电场。尽管有10(22)cm(-3)量级的相当大的初始载流子密度，栅极电压的施加还是引起了明显的电阻效应。此外，我们还发现，反常霍尔电导sigma(Xy)的栅调制比纵向霍尔电导sigma(Xx)的栅调制度大3倍，在低温下，它的栅调制度接近+/-40%。Sigma(Xy)随Sigma(Xx)的变化表现为与Sigma(Xx)的幂函数标度关系，这种关系在电荷输运的不良金属区域中被广泛观察到。(C)2014 AIP出版有限责任公司。
The electric field effect on ferromagnetism offers a new dimension in the recent advancement of spintronics. We report on the gate control of transport properties in thin films of oxide-based ferromagnetic metal, SrRuO3. An electric double layer transistor configuration was utilized with an ionic liquid dielectric to apply a strong electric field on a SrRuO3 thin film of 5 monolayers in thickness. The application of gate voltage induced a clear electroresistance effect, despite a considerably-large initial carrier density of the order of 10(22) cm(-3). Furthermore, we found that the gate modulation of the anomalous Hall conductivity sigma(xy), which was as large as similar to +/- 40% at low temperatures, was about three times larger than that of the longitudinal conductivity sigma(xx). The variation of sigma(xy) is characterized by the power-law scaling relation with sigma(xx), which is widely observed in a bad metal regime of the charge transport. (C) 2014 AIP Publishing LLC.