Mechanisms of 1D crystal growth in reactive vapor transport: Indium nitride nanowires
Mechanisms of 1D crystal growth in reactive vapor transport: Indium nitride nanowires
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DOI：
10.1021/nl0505804
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发表时间：
2005-08-01
期刊：
影响因子：
10.8
通讯作者：
Sunkara, MK
中科院分区：
文献类型：
--
作者：
Vaddiraju, S;Mohite, A;Sunkara, MK
详细研究了在解离氨环境中使用铟（In）蒸气输运（反应性蒸气输运）的氮化铟（InN）纳米线合成，以理解与所谓的“自催化”方案相关的成核和生长机制。结果表明，InN晶体的成核首先发生在衬底上。随后，由于In在InN晶体上的选择性润湿，在InN晶体的顶部上形成In液滴。通过液相外延通过In液滴的进一步生长导致一维（1D）的生长，导致InN纳米线的形成。有关这些自催化方案内的成核和生长方面的细节进一步合理化，通过展示异质外延取向的纳米线阵列的单晶基板上的生长和各种基板上的“树状”形态。然而，使用解离氨的In液滴的直接氮化导致直接从In熔体表面的纳米线的自发成核和基底生长，这与上述具有反应性蒸气输运的情况下的成核机制完全不同。InN纳米线的带隙为0.8 eV，而InN和In2O3纳米线的混合相除了在0.8 eV处有一个峰外，还在1.9 eV处有一个峰.
Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called "self-catalysis" schemes. The results show that the nucleation of InN crystal occurs first on the substrate. Later, In droplets are formed on top of the InN crystals because of selective wetting of In onto InN crystals. Further growth via liquid-phase epitaxy through In droplets leads the growth in one dimension (1D), resulting in the formation of InN nanowires. The details about the nucleation and growth aspects within these self-catalysis schemes are rationalized further by demonstrating the growth of heteroepitaxially oriented nanowire arrays on single-crystal substrates and "tree-like" morphologies on a variety of substrates. However, the direct nitridation of In droplets using dissociated ammonia results in the spontaneous nucleation and basal growth of nanowires directly from the In melt surface, which is quite different from the above-mentioned nucleation mechanism with the reactive vapor transport case. The InN nanowires exhibit a band gap of 0.8 ell, whereas the mixed phase of InN and In2O3 nanowires exhibit a peak at similar to 1.9 eV in addition to that at 0.8 eV.