Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells
Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells
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DOI：
10.1016/j.solmat.2014.06.010
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发表时间：
2014-09
影响因子：
6.9
通讯作者：
W. Xia;Hao Lin;Hsiangning Wu;C. Tang;I. Irfan;Chenggong Wang;Yongli Gao
中科院分区：
文献类型：
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作者：
W. Xia;Hao Lin;Hsiangning Wu;C. Tang;I. Irfan;Chenggong Wang;Yongli Gao
开发了一种基于Te/Cu双层的缓冲层，可用于形成欧姆接触顶部CdTe，用于CdS/CdTe太阳能电池。双层缓冲层通过气相沉积制备，需要热退火（~200 °C）才能激活。通过优化Cu/Te组分和热激活条件，获得了更高的效率和稳定性。XRD、XPS和PL表征表明，在热激活条件下，Cu在Te中迅速扩散，没有形成CuxTe化合物。增强的稳定性可以归因于通过Te层调解Cu扩散到CdTe中。Te/Cu缓冲层对于超薄CdS/CdTe太阳能电池的制造特别有用。
A buffer layer based on a Te/Cu bi-layer useful for forming ohmic contact top-CdTe has been developed for application in CdS/CdTe solar cells. The bi-layer buffer was prepared by vapor deposition and a thermal annealing (~200 °C) was required for activation. Enhanced efficiency and stability were obtained by optimizing the Cu/Te compositions and the thermal activation conditions. Characterization by XRD, XPS, and PL indicates that under the thermal activation conditions Cu diffuses rapidly in the Te without forming CuxTe compounds. The enhanced stability can be attributed to the mediation of Cu diffusion into CdTe by the Te layer. The Te/Cu buffers are particularly useful for the fabrication of ultra-thin CdS/CdTe solar cells.