Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
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DOI：
10.1063/1.5053412
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发表时间：
2018-12
影响因子：
3.2
通讯作者：
Rahul Kumar;Y. Maidaniuk;A. Kuchuk;S. Saha;Pijush K. Ghosh;Y. Mazur;M. Ware;G. Salamo
中科院分区：
文献类型：
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作者：
Rahul Kumar;Y. Maidaniuk;A. Kuchuk;S. Saha;Pijush K. Ghosh;Y. Mazur;M. Ware;G. Salamo
一组在 GaAs 基质中包含厚度从 0.5 到 1.4ML 不等的超薄 InAs 层的样品，通过分子束外延在 GaAs (001) 衬底上低温生长，并通过低温光致发光 (PL) 进行了研究。实验观察到发射能量随 InAs 厚度呈线性变化。研究了 InAs/GaAs 异质结构的 PL 发射线形状与入射光强度的函数关系。不相关的电子-空穴对、自由激子和局域激子之间的相互作用作为激发强度的函数，被发现对 InAs 层的光学性质起着重要作用，并进行了详细描述。
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail.