MBE Growth of (In)GaN for LED Applications
MBE Growth of (In)GaN for LED Applications
复制标题
用于 LED 应用的 (In)GaN 的 MBE 生长
DOI：
10.1557/proc-449-149
复制
发表时间：
1996
期刊：
影响因子：
--
通讯作者：
H. Tews
中科院分区：
文献类型：
--
作者：
H. Riechert;R. Averbeck;A. Graber;M. Schienle;U. Strauβ;H. Tews
我们报告的InGaN / GaN的p-n结的气体源分子束外延（MBE）生长的基本方面，并提出了第一个蓝色和绿色电致发光从这种结构完全由MBE生长。
蓝宝石上的GaN成核层的生长条件和随后的生长未掺杂的GaN的研究指出了Ga稳定生长的必要性。以1 μm/h生长的非故意掺杂GaN显示出低于1017 cm-3的背景掺杂水平和高达320 cm 2/Vsec的迁移率（在300 K下）。观察到在黄色光谱范围内具有非常低强度的窄光致发光。用Si和Mg对GaN进行N型和p型掺杂产生了在器件典型的载流子密度下具有高迁移率（在300 K下分别为220和10 cm 2/Vsec）的层。
虽然铟的掺入强烈地依赖于温度，但常规地获得In含量超过40%的InGaN层。我们的InGaN层的光学性质通常表现出通常观察到的宽深能级发光。最后，我们提出了InGaN / GaN双异质结在可见光谱范围内的电致发光高达540 nm。
We report on essential aspects of the growth of InGaN / GaN p-n junctions by gas-source molecular beam epitaxy (MBE) and present the first blue and green electroluminescence from such structures grown entirely by MBE.
A study of the growth conditions for a GaN nucleation layer on sapphire and for the subsequent growth of undoped GaN points out the necessity for Ga-stabilized growth. Unintentionally doped GaN grown at 1 μm/h shows background doping levels below 1017 cm-3 and mobilities up to 320 cm2/Vsec (at 300K). Narrow photoluminescence with very low intensity in the yellow spectral range is observed. N- and p-type doping of GaN with Si and Mg yields layers with high mobilities (220 and 10 cm2/Vsec, respectively at 300K) at carrier densities typical for devices.
Although incorporation of Indium is strongly temperature-dependent, InGaN-layers with In-contents of over 40% are obtained routinely. The optical properties of our InGaN layers typically exhibit the commonly observed, broad deep level luminescence. Finally, we present electroluminescence in the visible spectral range up to 540 nm from InGaN / GaN double-heterojunctions.