Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition
Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition
复制标题
物理气相沉积在硅上沉积铌的硅化物
DOI：
10.1149/1.3609845
复制
发表时间：
2011
影响因子：
3.9
通讯作者：
D. Gu
中科院分区：
文献类型：
--
作者：
C. Ndoye;K. Tapily;M. Orlowski;H. Baumgart;D. Gu
铌是通过物理气相沉积（PVD）使用电子束蒸发裸（100）硅衬底和SiO2表面上沉积。通过在400-1000°C的温度范围内退火PVD Nb膜来研究硅化铌的形成。在所有升高的退火温度下，Nb硅化物的电阻率基本上高于Nb的电阻率。Nb硅化作为温度的函数进行了研究，不同的NbXSiy化合物已被表征。已经观察到，Si上的Nb膜的退火伴随着所得反应膜的约2.5的强烈体积膨胀。使用X射线衍射（XRD），能量色散X射线光谱（EDS），和原子力显微镜（AFM），这是以前没有在现有的NbSi文献的上下文中提出的薄膜的结构特性进行了研究。在1000°C下退火的Si上Nb样品的X射线衍射表征显示存在六方Nb 5Si 3相和NbSi 2相，所述六方Nb 5Si 3相在（200）平面处具有主峰。分形维数计算表明，在600°C及以上的退火温度下，NbSi形成从Stranski-Krastanov到Volmer-Weber薄膜生长的明显转变。
Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.