Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation
Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation
复制标题
DOI：
10.1063/1.4991364
复制
发表时间：
2017-07-03
影响因子：
4
通讯作者：
Kawarada, Hiroshi
中科院分区：
文献类型：
--
作者：
Naramura, Takuro;Inaba, Masafumi;Kawarada, Hiroshi
金刚石电解质溶液门场效应晶体管（sgfet）具有宽的电位窗口和良好的物理和化学稳定性，适合用作化学离子传感器。在这项研究中，我们从一个完整的氢端金刚石SGFET制备了阳极氧化的金刚石SGFET，并演示了通过不可逆阳极氧化来控制器件的阈值电压。施加的阳极偏置电压（V- ao）由低到高（1.1 ~ 1.7 V）逐渐变化。随着阳极氧化的进行，阈值电压向负值移动，但没有降低空穴迁移率。因此，阳极氧化是控制金刚石sgfet阈值电压的有效方法。AIP出版社出版。
Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (V-AO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs. Published by AIP Publishing.