Effect of annealing temperature on luminescence in Eu implanted GaN
Effect of annealing temperature on luminescence in Eu implanted GaN
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退火温度对Eu注入GaN发光的影响
DOI：
10.1016/j.optmat.2005.09.022
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发表时间：
2006
影响因子：
3.9
通讯作者：
E. Alves
中科院分区：
文献类型：
--
作者：
L. Bodiou;A. Oussif;A. Braud;J. Doualan;R. Moncorgé;K. Lorenz;E. Alves
研究了注入GaN样品中铕红光致发光（5D 0 → 7 F2）随退火温度的变化。对于上述带隙激发，在1300°C下退火的样品观察到光致发光（PL）显着增加。在12 K的激发密度相关的测量显示存在两个主要的掺入位点的Eu 3+离子在GaN样品。两个Eu 3+中心的光谱特性进行了描述。Eu ~（3+）~ 5D 0寿命和有效激发截面在不同的样品中进行了测定。结果表明，一个中心对应于Eu 3+离子在Ga的替代网站与相应的相当低的有效激发截面相比，其他中心表现出较高的激发截面，可能是与一个更扭曲的局部环境。
Europium red photoluminescence (5D0→7F2) in implanted GaN samples is investigated as a function of the annealing temperature. For above bandgap excitation a remarkable increase of the photoluminescence (PL) is observed for samples annealed at 1300°C. Excitation density dependent measurements at 12K reveal the existence of two major incorporation sites for Eu3+ions in GaN samples. Spectral characteristics of the two Eu3+centers are described. Eu3+5D0lifetimes and effective excitation cross-sections specific to each Eu3+center are determined in various samples. Results suggest that one center corresponds to Eu3+ions in Ga substitutional sites with a corresponding rather low effective excitation cross-section compared to the other center which exhibits a higher excitation cross-section and is probably associated to a more distorted local environment.