Elastic constants and thermal expansion coefficient of metastable C49 TiSi2
Elastic constants and thermal expansion coefficient of metastable C49 TiSi2
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DOI：
10.1063/1.353058
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发表时间：
1993-03
影响因子：
3.2
通讯作者：
J. F. Jongste;O. Loopstra;G. Janssen;S. Radelaar
中科院分区：
文献类型：
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作者：
J. F. Jongste;O. Loopstra;G. Janssen;S. Radelaar
通过热处理过程中的原位曲率测量和非原位 X 射线衍射测量，研究了 C49 TiSi2 薄膜的弹性常数和热膨胀系数。 C49 TiSi2 化合物由沉积在单晶硅和蓝宝石基板上的 Ti-Si 多层形成。该薄膜是多晶的，没有任何明显的纹理。杨氏模量（142 GPa）、泊松比（0.27）和热膨胀系数（10.9×10−6 K−1）已确定。请注意，这些值是随机晶体取向的平均值。 C49 TiSi2 薄膜形成后立即表现出拉伸应力。当温度高于 375 °C 时，该应力会显着减弱。低于该温度时，发现热膨胀与 C49 TiSi2 薄膜的松弛状态无关。
The elastic constants and thermal expansion coefficient of C49 TiSi2 thin films have been investigated by in situ curvature measurement during heat treatment and ex situ x‐ray diffraction measurements. The C49 TiSi2 compound was formed from Ti‐Si multilayers deposited on monocrystalline silicon and sapphire substrates. The films were polycrystalline without any evident texture. Young’s modulus (142 GPa), Poisson’s ratio (0.27), and the thermal expansion coefficient (10.9×10−6 K−1) have been determined. Note that these values are averages over random crystal orientations. Directly after formation C49 TiSi2 films exhibit tensile stress. This stress relaxes considerably above 375 °C. Below this temperature the thermal expansion is found to be independent of the state of relaxation of the C49 TiSi2 film.