Carrier behavior of HgTe under high pressure revealed by Hall effect measurement
Carrier behavior of HgTe under high pressure revealed by Hall effect measurement
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霍尔效应测量揭示高压下 HgTe 的载流子行为
DOI：
10.1088/1674-1056/24/11/116401
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发表时间：
2015-10
期刊：
影响因子：
--
通讯作者：
Li Xue-Fei
中科院分区：
文献类型：
--
作者：
Hu Ting-Jing;Cui Xiao-Yan;Li Xue-Fei
We investigate the carrier behavior of HgTe under high pressures up to 23 GPa using in situ Hall effect measurements. As the phase transitions from zinc blende to cinnabar, then to rock salt, and finally to Cmcm occur, all the parameters change discontinuously. The conductivity variation under compression is described by the carrier parameters. For the zinc blende phase, both the decrease of carrier concentration and the increase of mobility indicate the overlapped valence band and conduction band separates with pressure. Pressure causes an increase in the hole concentration of HgTe in the cinnabar phase, which leads to the carrier-type inversion and the lowest mobility at 5.6 GPa. In the phase transition process from zinc blende to rock salt, Te atoms are the major ones in atomic movements in the pressure regions of 1.0–1.5 GPa and 1.8–3.1 GPa, whereas Hg atoms are the major ones in the pressure regions of 1.5–1.8 GPa and 3.1–7.7 GPa. The polar optical scattering of the rock salt phase decreases with pressure.
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影响因子：
8.6
作者：
W. Walukiewicz
通讯作者：
W. Walukiewicz
DOI：
10.1103/physrevb.48.7872
发表时间：
1993-09
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Jeon;Gíslason;Watkins
通讯作者：
Jeon;Gíslason;Watkins
影响因子：
3.7
作者：
V. Briois;C. Brouder;P. Sainctavit;A. Miguel;J. Itié;A. Polian
通讯作者：
V. Briois;C. Brouder;P. Sainctavit;A. Miguel;J. Itié;A. Polian
影响因子：
--
作者：
S. Narita;M. Egawa;K. Suizu;M. Katayama;S. Mizukami
通讯作者：
S. Narita;M. Egawa;K. Suizu;M. Katayama;S. Mizukami
影响因子：
3.7
作者：
A. Werner;H. .. Hochheimer;K. Strössner;A. Jayaraman
通讯作者：
A. Werner;H. .. Hochheimer;K. Strössner;A. Jayaraman