Electrically detected double electron–electron resonance: exchange interaction of P donors and P defects at the Si/SiO interface
Electrically detected double electron–electron resonance: exchange interaction of P donors and P defects at the Si/SiO interface
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电学检测双电子-电子共振：Si/SiO界面上P供体和P缺陷的交换相互作用
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Brandt
中科院分区：
文献类型：
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作者：
M. Suckert;F. Hoehne;L. Dreher;Markus Kuenzl;H. Huebl;M. Stutzmann;M. Brandt
我们利用电检测双电子-电子共振（EDDEER）技术研究了Si/SiO2界面上P悬空键缺陷与其下外延层中31P给体的耦合。观察到EDDEER信号的指数衰减，这归因于交换耦合强度J/2π在25 kHz至3 MHz范围内的广泛分布。实验数据与交换耦合数值模拟的比较表明，该耦合强度范围对应于31P-P距离，范围为14 ~ 20 nm。
We study the coupling of P dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron–electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2π from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P–P distances ranging from 14 nm to 20 nm.